Harnessing Hydrogen-Induced Blistering for Next-Generation Diamond-on-Insulator Devices

<p>This research unveils a pioneering approach to leverage hydrogen-induced blistering in diamond to fabricate high-performance diamond-on-insulator (DOI) platforms. By precisely controlling hydrogen implantation and subsequent thermal processing, controlled blistering can be achieved that enables the transfer of ultrathin diamond layers onto insulating substrates. This technique yields defect-free, single-crystal diamond films with exceptional electrical and thermal properties, ideal for advanced electronic and photonic applications. The resulting DOI structures demonstrate superior carrier mobility and thermal conductivity, surpassing conventional semiconductor platforms. The scalable method opens new avenues for integrating diamond into quantum computing, high-power electronics, and optoelectronic devices, redefining the landscape of next-generation semiconductor technologies. Picture adapted from Diamond and Related Materials 126, 2022, 10908.</p><p><br></p>